New paper on PE-ALD of copper oxide

Our paper “Plasma-Enhanced Atomic Layer Deposition of p-type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology” is published in Journal of Physical Chemistry C. We demonstrate a new PE-ALD process for CuOx films using a combination of oxygen and hydrogen plasma. This enables tuning of oxidation state in Cu, which is analyzed by synchrotron XANES measurements. p-type TFTs are fabricated, showing an on-off ration of 105. [link]